Electronic apparatus

ABSTRACT

The disclosure provides an electronic apparatus. The electronic apparatus includes a substrate, a first metal layer, an insulating layer, a first conductor, an electronic assembly and a transistor circuit die. The first metal layer is disposed on the substrate. The insulating layer is disposed on the substrate. The first conductor is formed in a first via of the insulating layer. The electronic assembly is disposed on the substrate and electrically connected to the first metal layer through the first conductor. The transistor circuit die is electrically connected to the first metal layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of U.S. application Ser. No. 17/678,040, filed on Feb.23, 2022. The prior U.S. application Ser. No. 17/678,040 is a divisionalapplication of and claims the priority benefit of U.S. application Ser.No. 16/920,448, filed on Jul. 3, 2020, now abandoned. The prior U.S.application Ser. No. 16/920,448 claims the priority benefit of U.S.provisional application Ser. No. 62/879,568, filed on Jul. 29, 2019,U.S. provisional application Ser. No. 62/985,892, filed on Mar. 6, 2020,and China application serial no. 202010411348.5, filed on May 15, 2020.The entirety of each of the above-mentioned patent applications ishereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND Technical Field

The disclosure relates to an apparatus, and particularly relates to anelectronic apparatus and a manufacturing method thereof.

Description of Related Art

The increasing delicacy of electronic apparatuses makes it more and moredifficult to directly manufacture an active assembly on a substrate, athin film, or glass. Besides, due to the line width and pitchlimitations in semiconductor manufacturing processes, a multi-layeredrouting structure needs to be manufactured on a conventional circuitsubstrate, so as to dispose an active assembly on the circuit substrate.Accordingly, the size and the manufacturing cost of an electronicapparatus are increased. In view of this, several embodiments areproposed in the following.

SUMMARY

The embodiments of the disclosure relate to an electronic apparatus anda manufacturing method of the electronic apparatus, and are capable ofproviding or manufacturing an electronic apparatus with an electronicstructure including a transistor circuit and single-sided ordouble-sided redistribution layer (RDL) routing.

According to an embodiment of the disclosure, an electronic apparatusincludes a first insulating layer, a first metal layer, a second metallayer, and an electronic assembly. The first insulating layer includes afirst surface and a second surface opposite to the first surface. Thefirst metal layer has an opening and is formed on the first surface. Thesecond metal layer is formed on the second surface and a projection ofthe opening on the second surface is overlapped with a projection of thesecond metal layer on the second surface. The electronic assembly iselectrically connected with the first metal layer and the second metallayer.

According to an embodiment of the disclosure, an electronic apparatusincludes a first insulating layer, a first metal layer, a second metallayer, a PN junction assembly, and a transistor circuit. The firstinsulating layer includes a first surface and a second surface oppositeto the first surface. The first metal layer is formed above the secondsurface. The second metal layer is formed on the second surface. The PNjunction assembly is disposed on the first surface and electricallyconnected with the first metal layer and the second metal layer. The PNjunction assembly includes a variable capacitor. The transistor circuitis electrically connecting with the second metal layer.

According to an embodiment of the disclosure, a manufacturing method ofan electronic apparatus includes: providing a carrier substrate; forminga first metal layer having an opening on the carrier substrate; forminga first insulating layer on the first metal layer, and a first surfaceof the first insulating layer contacts the first metal layer; andforming a second metal layer on the first insulating layer, and a secondsurface of the first insulating layer contacts the second metal layer,wherein the first surface is opposite to the second surface, and aprojection of the opening on the second surface is overlapped with aprojection of the second metal layer on the second surface.

According to an embodiment of the disclosure, a manufacturing method ofan electronic apparatus includes: providing a carrier substrate; forminga first insulating layer on the carrier substrate, and a first surfaceof the first insulating layer contacts the carrier substrate; forming afirst metal layer and a second metal layer on the first insulatinglayer, and a second surface of the first insulating layer contacts thefirst metal layer and the second metal layer, wherein the first surfaceis opposite to the second surface; electrically connecting thetransistor circuit with the second metal layer; removing the carriersubstrate; and disposing a PN junction assembly having a variablecapacitor on the first insulating layer, and electrically connecting thePN junction assembly with the first metal layer and the second metallayer.

According to an embodiment of the disclosure, an electronic apparatusincludes a substrate, a first metal layer, an insulating layer, a firstconductor, an electronic assembly and a transistor circuit die. Thefirst metal layer is disposed on the substrate. The insulating layer isdisposed on the substrate. The first conductor is formed in a first viaof the insulating layer. The electronic assembly is disposed on thesubstrate and electrically connected to the first metal layer throughthe first conductor. The transistor circuit die is electricallyconnected to the first metal layer.

Based on the above, the electronic apparatus and the manufacturingmethod of the electronic apparatus according to the embodiments of thedisclosure are able to realize an electronic apparatus with anelectronic structure that is smaller and requires a lost manufacturingcost by using RDL routing with a fewer number of layers and disposing atransistor circuit.

To make the features and advantages of the disclosure morecomprehensible, a detailed description is made below with reference tothe accompanying drawings by using embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments of thedisclosure and, together with the description, serve to explain theprinciples of the disclosure.

FIG. 1 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a first embodiment of thedisclosure.

FIGS. 2A and 2B are flowcharts illustrating a manufacturing method ofthe electronic apparatus according to the first embodiment of thedisclosure.

FIGS. 3A to 3D are schematic cross-sectional views illustratingstructures in respective stages in the manufacturing method shown inFIGS. 2A and 2B.

FIG. 4 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a second embodiment of thedisclosure.

FIGS. 5A and 5B are flowcharts illustrating a manufacturing method ofthe electronic apparatus according to the second embodiment of thedisclosure.

FIGS. 6A to 6D are schematic cross-sectional views illustratingstructures in respective stages in the manufacturing method shown inFIGS. 5A and 5B.

FIG. 7 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a third embodiment of thedisclosure.

FIG. 8 is a flowchart illustrating a manufacturing method of theelectronic apparatus according to the third embodiment of thedisclosure.

FIGS. 9A to 9D are schematic cross-sectional views illustratingstructures in respective stages in the manufacturing method shown inFIG. 8 .

FIG. 10 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a fourth embodiment of thedisclosure.

FIG. 11 is a flowchart illustrating a manufacturing method of theelectronic apparatus according to the fourth embodiment of thedisclosure.

FIGS. 12A to 12D are schematic cross-sectional views illustratingstructures in respective stages in the manufacturing method shown inFIG. 11 .

FIG. 13 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a fifth embodiment of thedisclosure.

FIG. 14 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a sixth embodiment of thedisclosure.

FIG. 15 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a seventh embodiment of thedisclosure.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present preferredembodiments of the disclosure, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts.

Some words are used to refer to specific elements in the wholespecification and the appended claims in the disclosure. A personskilled in the art should understand that a display facilitymanufacturer may use different names to refer to the same elements. Thespecification is not intended to distinguish elements that have the samefunctions but different names. In the specification and the claims,words such as “include”, “comprise”, and “have” are open words, andshould be interpreted as “including, but not limited to”.

In some embodiments of the disclosure, unless otherwise specified, termsfor bonding or connection, such as “connect”, “interconnect”, etc., mayindicate that two structures are in direct contact with each other, orthat the two structures are not in direct contact with each other andanother structure is provided between the two structures. The terms forbonding or connection also cover the case where the two structures areboth movable or the two structures are both fixed. In addition, the term“couple” refers to any direct or indirect electrical connection means.

The description that a first material layer is disposed on or above asecond material layer covers the case where the first material layer isin direct contact with the second material layer. Alternatively, suchdescription also covers the case where one or more material layersintervene between the first material layer and the second materiallayer. In such case, it is possible that the first material layer andthe second material layer are not in direct contact with each other. Insome embodiments of the disclosure, unless otherwise specified, termsfor bonding or connection, such as “connect”, “interconnect”, etc., mayindicate that two structures are in direct contact with each other, orthat the two structures are not in direct contact with each other andanother structure is provided between the two structures. The terms forbonding or connection also cover the case where the two structures areboth movable or the two structures are both fixed.

In addition, the terms such as “about”, “approximately”,“substantially”, etc., are generally interpreted as within 15% of thegiven value or range, or interpreted as within 10%, 5%, 3%, 2%, 1%, or0.5% of the given value or range. Here, a given number is interpreted asan approximate number. In other words, even without “about”,“approximately”, “substantially”, etc., the number still bears themeaning of “about”, “approximately”, “substantially”, etc.

While terms such as “first”, “second”, “third”, etc. may serve todescribe or name different components, these components shall not belimited by these terms. These terms merely serve to distinguish onecomponent in the specification from other components and are irrelevantof the order in which the components are manufactured. Different termsmay be used in the claims, and the terms may be named with terms such as“first”, “second”, “third”, etc., according to the order in which theterms are stated in the claims. Accordingly, a first component in thespecification may be a second component in the claims. In thedisclosure, unless otherwise described, the components with the samename (e.g., transistor circuit 150, transistor circuit 350, etc.) indifferent embodiments or drawings may bear like or similar propertiesand, for the conciseness of description, the descriptions thereof willnot be made repetitively.

It should be noted that in the following embodiments, features in aplurality of embodiments may be replaced, recombined, or mixed tocomplete other embodiments without departing from the spirit of thedisclosure.

FIG. 1 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a first embodiment of thedisclosure. Referring to FIG. 1 , an electronic apparatus 100 mayinclude an electronic structure having double-sided redistribution layer(RDL) routing, so that a relevant electronic element or circuit elementmay be disposed on both sides of a substrate. However, the disclosure isnot limited thereto. Specifically, the electronic apparatus 100 mayinclude a first metal layer 110, a first insulating layer 120, a secondmetal layer 130, a routing layer 140, a transistor circuit 150, a secondinsulating layer 160, an electronic assembly 170, and a control circuit180. The transistor circuit 150 may include one or more transistors,such as a thin-film transistor (TFT), and the transistors may bebottom-gate transistors, top-gate transistors, or double/dual-gatetransistors. The transistor circuit 150 may be electrically connectedwith the first metal layer 110 and/or the electronic assembly 170.However, the disclosure is not limited thereto. In the embodiment, thefirst insulating layer 120 includes a first surface S1 and a secondsurface S2. The first surface S1 is opposite to the second surface S2.Each of the first surface S1 and the second surface S2 is substantiallyparallel to a plane formed by extending from a first direction D1 and asecond direction D2. The first surface S1 faces toward a directionopposite to a third direction D3, and the second surface S2 faces towardthe third direction D3. The first direction D1, the second direction D2,and the third direction D3 are substantially perpendicular to eachother. In the embodiment, the first insulating layer 120 may include aflexible material, such as polyimide (PI). However, the disclosure isnot limited thereto. In some embodiments, the first insulating layer 120may also include a rigid material (e.g., glass, ceramics, sapphire, orother suitable materials), a flexible material (e.g., a polymer materialor other suitable materials), or a plastic circuit board, etc.

In the embodiment, the first metal layer 110 has an opening 111 and isformed on a first surface S1 of the first insulating layer 120. Theopening 111 may extend in the second direction D2 and exhibit a troughstructure. The second metal layer 130 is formed on the second surface S2of the first insulating layer 120. In the embodiment, a projection ofthe opening 111 on the second surface S2 in the third direction D3 isoverlapped with a projection of the second metal layer 130 on the secondsurface S2 in the direction opposite to the third direction D3. Itshould be noted that the first metal layer 110 may include a circuitassembly or a metal assembly structure including at least one of anelectrode sheet, a bonding pad, a routing, and a heat sink, and thesecond metal layer 130 may also include a circuit assembly or a metalassembly structure including at least one of an electrode sheet, abonding pad, a routing, and a heat sink. In the embodiment, the routinglayer 140 and the transistor circuit 150 may also be formed on thesecond surface S2 of the first insulating layer 120. In addition, therouting layer 140 may include a plurality of circuit wires. Thetransistor circuit 150 is electrically connected with the routing layer140. In some embodiments, the second metal layer 130, the routing layer140, and the transistor circuit 150 may be formed at the same layer onthe second surface S2 of the first insulating layer 120, or may beformed between a plurality of other insulating layers on the secondsurface S2 of the first insulating layer 120, so as to respectively keepdifferent distances from the second surface S2 of the first insulatinglayer 120.

In the embodiment, the second insulating layer 160 covering the secondmetal layer 130, the routing layer 140, and the transistor circuit 150is further formed on the second surface S2 of the first insulating layer120. The electronic assembly 170 may be disposed on the secondinsulating layer 160. The electronic assembly 170 may be electricallyconnected with the first metal layer 110 and the second metal layer 130via a conductor 171 and a conductor 172. However, the disclosure is notlimited thereto. The conductor 171 may be arranged as a via to penetratethrough the first insulating layer 120 and the second insulating layer160. In addition, the conductor 172 may be arranged as a via topenetrate through the second insulating layer 160. The materials of theconductors 171 and 172 may include a metal conductive material, such asa tin lead alloy. In the embodiment, the electronic assembly 170 mayinclude a PN unction assembly, a solar cell, an integrated circuit (IC),a light emitting diode (LED) assembly, or a sensor, etc. However, thedisclosure is not limited thereto. In some embodiments, the PN junctionassembly includes a variable capacitor, such as a varactor. However, thedisclosure is not limited thereto. In addition, in some embodiments, apassive assembly, a thin film battery, a sensor, or an LED, etc., mayalso be disposed on or electrically connected with the first metal layer110 on the first surface S1 of the first insulating layer 120. However,the disclosure is not limited thereto, either. In the embodiment, thecontrol circuit 180 may be disposed on a carrier plate 181 andelectrically connected with the routing layer 140 through a conductivematerial 182, so as to be electrically connected with the transistorcircuit 150 via the routing layer 140. However, the disclosure is notlimited thereto. The conductive material 182 may include an anisotropicconductive film or other suitable conductive materials. However, thedisclosure is not limited thereto. In the embodiment, the controlcircuit 180 is configured to provide relevant electronic signals, suchas control signals, driving signals, etc., to the electronic assembly170 via the transistor circuit 150 to control or drive the electronicassembly 170. Therefore, the electronic apparatus 100 of the embodimentis provided with an architecture having the double-sided RDL routing andprovided with the transistor circuit 150. In addition, the electronicassembly 170 disposed on the substrate may be controlled or driven bythe transistor circuit 150. In an embodiment, the carrier plate 181 mayinclude a flexible printed circuit (FPC) board or other suitable circuitboards. However, the disclosure is not limited thereto. In otherembodiments, the control circuit 180 may be electrically connected withthe transistor circuit 150, but the electrical connection does not needto go through the carrier plate 181 and/or the conductive material 182.

In the embodiment, the electronic apparatus 100 may include a displayapparatus, an electromagnetic wave adjustment apparatus, a sensingapparatus, or a splicing apparatus. However, the disclosure is notlimited thereto. The electronic apparatus 100 may be a bendable orflexible electronic apparatus. The electronic apparatus 100 may include,for example, a liquid crystal light emitting diode, and the lightemitting diode may include, for example, an inorganic light emittingdiode, an organic light emitting diode (OLED), a mini LED, a micro LED,a quantum dot LED (such as QLED or QDLED), fluorescence, phosphor, orother suitable materials, and the materials may be arbitrarilycombined/arranged. However, the disclosure is not limited thereto. Theelectromagnetic wave adjustment apparatus may serve to receive ortransmit electromagnetic waves, for example. However, the disclosure isnot limited thereto. The splicing apparatus may be, for example, adisplay splicing apparatus or a splicing apparatus for theelectromagnetic wave adjustment apparatus. However, the disclosure isnot limited thereto. The electronic apparatus 100 may be an arbitrarycombination of the aforementioned components. However, the disclosure isnot limited thereto.

FIGS. 2A and 2B are flowcharts illustrating a manufacturing method ofthe electronic apparatus according to the first embodiment of thedisclosure. FIGS. 3A to 3D are schematic cross-sectional viewsillustrating structures in respective stages in the manufacturing methodshown in FIGS. 2A and 2B. Each of the steps in the embodiment may becarried out by performing a corresponding semiconductor manufacturingprocess or a combination of a plurality of corresponding semiconductormanufacturing processes. In addition, the structures of FIGS. 3A to 3Dformed in the respective intermediate steps may be respectivelyimplemented independently as specific electronic apparatuses, and thesestructures are not limited to being only applicable to the electronicapparatus manufactured in the final step. Referring to FIGS. 2A and 3A,the manufacturing method of FIG. 2A allows to manufacture an electronicapparatus with an electronic structure having double-sided RDL routing.In Step S201, a carrier substrate 301 is provided. The carrier substrate301 may be a rigid substrate or a flexible substrate. The disclosuredoes not intend to impose a limitation on this regard. In Step S202, afirst metal layer 310 having an opening 311 is formed on the carriersubstrate 301. The opening 311 may be formed by performing asemiconductor etching process. Also, in the first metal layer 310, ametal component or a circuit component such as an electrode 312, anelectrode 313, an electrode 314, an electrode 315, and an electrode 316,etc., shown in FIG. 3A may be formed by performing a semiconductoretching process. In the embodiment, one or more of the electrodes 312,313, 314, 315, and 316 may be omitted. However, the disclosure is notlimited thereto. In Step S203, a first insulating layer 320 may beformed on the first metal layer 310, and the first surface S1 of thefirst insulating layer 320 contacts the first metal layer 310. In StepS204, a second metal layer 330 is formed on the first insulating layer320, and the second surface S2 of the first insulating layer 320contacts the second metal layer 330. The first surface S1 is opposite tothe second surface S2. It should be noted that a projection of theopening 311 on the second surface S2 may be overlapped with a projectionof the second metal layer 330 on the second surface S2. In thedisclosure, unless otherwise specified, the term “overlapping” may referto both completely overlapping and partially overlapping. In Step S205,a transistor circuit 350 may be formed on the first insulating layer320. In Step S206, a routing layer 340 may be formed on the firstinsulating layer 320. In addition, the routing layer 340 may beelectrically connected with the transistor circuit 350. In Step S207, asecond insulating layer 360 covering the second metal layer 330, therouting layer 340, and the transistor circuit 350 is formed on the firstinsulating layer 320.

Referring to FIGS. 2A and 3B, in Step S208, an electronic assembly 370is disposed on the second insulating layer 360, and the electronicassembly 370 is electrically connected with the transistor circuit 350,the first metal layer 310, and the second metal layer 330. Theelectronic assembly 370 may be electrically connected with the firstmetal layer 310 and the second metal layer 330 through a conductor 371and a conductor 372 by performing a surface mount technology (SMT)process, and may be electrically connected with the transistor circuit350 via additional routing. The conductor 371 may be arranged as a viato penetrate through the first insulating layer 320 and the secondinsulating layer 360. The conductor 372 may also be arranged as a via topenetrate through the second insulating layer 360. In Step S209, acontrol circuit 380 is electrically connected with the routing layer340. The chip on film (COF) packaging technology or the chip on glass(COG) technology may be adopted to manufacture the control circuit 380on a carrier plate 381. The carrier plate 381 may be a thin film orglass. The routing layer 340 may include a fan-out routing, and therouting layer 340 may be arranged in correspondence with the via oropening of the second insulating layer 360 above the routing layer 340.However, the disclosure is not limited thereto. In the embodiment, acontrol chip formed by the control circuit 380 and the carrier plate 381may be arranged above the routing layer 340 in a chip face down manner,and the control chip may be electrically connected with the routinglayer 340 by SMT or by bonding with an anisotropic conductive film(ACF). However, the disclosure is not limited thereto. For example, thecontrol circuit 380 may be electrically connected with the routing layer340 through a circuit on the carrier plate 381 and a conductive material382 and electrically connected with the transistor circuit 350 via therouting layer 340. The control circuit 380 may control or drive theelectronic assembly 370 through the transistor circuit 350.

For example, the electronic assembly 370 may include a variablecapacitor. In addition, the control circuit 380 may modulate thecapacitance value of the variable capacitor through the transistorcircuit 350, so that the capacitance value between the first metal layer310 and the second metal layer 330 may be correspondingly adjusted.Therefore, an electromagnetic wave radiation assembly or anelectromagnetic wave radiation modulator may be formed between theopening 311 of the first metal layer 310 and the second metal layer 330.However, the disclosure is not limited thereto.

Referring to FIG. 3C, in some embodiments, Step S208 may further includefurther providing another electronic assembly 370′ on the secondinsulating layer 360. In addition, the electronic assembly 370′ may beelectrically connected with the second metal layer 330. Referring toFIGS. 2B and 3C, in Step S210, a connecting layer 302 covering theelectronic assemblies 370 and 370′ and the control circuit 380 is formedon the second insulating layer 360, and another carrier substrate 303 isdisposed on the connecting layer 302. The carrier substrate 303 may be arigid substrate or a flexible substrate, and the material of theconnecting layer 302 may include a temporary connecting material, forexample. In Step S211, the carrier substrate 301 is removed. The carriersubstrate 301 may be removed by, for example, laser, heating, or lightirradiation, etc. The disclosure does not intend to impose a limitationon this regard. Since the material of the first insulating layer 320 mayinclude a flexible circuit board material, for example, in order toreduce the damages to the structures and the assembly on the sides ofthe first insulating layer 320 when the carrier substrate 301 isremoved, the another carrier substrate 303 and the connecting layer 302are firstly formed on the second insulating layer 360, and then thecarrier substrate 301 is removed. Referring to FIGS. 2B and 3D, in StepS212, a passive assembly 390 may be disposed below the first metal layer310, and the passive assembly 390 is electrically connected with thefirst metal layer 310. In Step S213, the connecting layer 302 and thecarrier substrate 303 are removed. The connecting layer 302 may beremoved by, for example, laser, heating, or light irradiation, etc., sothat the carrier substrate 303 may be separated from the secondinsulating layer 360. However, the disclosure is not limited thereto. Inaddition, Steps S210 to S213 of FIG. 2B may also be applied to thestructure shown in FIG. 3B, so as to effectively remove the carriersubstrate 301 of FIG. 3B.

For example, the electronic assembly 370 may include an integratedcircuit, and the another electronic assembly 370′ may include a solarcell. The integrated circuit may, for example, include a relevantmodulation circuit, such as a rectifier. The passive assembly 390 may bea thin film battery. Therefore, the solar cell may provide electricpower to the integrated circuit via the first metal layer 310. Inaddition, after voltage or current modulation, the modulated electricpower is supplied to the second metal layer 330, so as to charge thethin film battery. However, the disclosure is not limited thereto.

FIG. 4 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a second embodiment of thedisclosure. FIG. 4 is a schematic cross-sectional view illustrating astructure of an electronic apparatus according to a second embodiment ofthe disclosure. An electronic apparatus 400 may include an electronicstructure having double-sided redistribution layer (RDL) routing, sothat a relevant electronic element or circuit element may be disposed onboth sides of a substrate. Specifically, the electronic apparatus 400includes a first metal layer 410, a first insulating layer 420, a secondmetal layer 430, a routing layer 440, a transistor circuit 450, a secondinsulating layer 460, an electronic assembly 470, and a control circuit480. The transistor circuit 450 may include one or more transistors, andthe transistors may be bottom-gate transistors, top-gate transistors, ordouble/dual-gate transistors. In the embodiment, the first insulatinglayer 420 includes the first surface S1 and the second surface S2. Thefirst surface S1 is opposite to the second surface S2. In theembodiment, the first insulating layer 420 may include a flexiblecircuit board material. However, the disclosure is not limited thereto.In some embodiments, the material of the first insulating layer 420 mayalso include a rigid material, a flexible circuit, or a plastic circuitboard, etc. However, the disclosure is not limited thereto. It should benoted that the transistor circuit 450 of the embodiment may be a diehaving a plurality of transistor circuits to electrically connect thetransistor circuits 450 integrated on the die and the routing layer 440,thereby electrically connecting the transistor circuit 450 and therouting layer 440. For example, the transistor circuit 450 may include abase material (not shown) and at least one transistor. The material ofthe base material may include glass or other suitable materials. The atleast one transistor is disposed on the base material, and thetransistor circuit 450 is electrically connected with the routing layer440.

In the embodiment, the first metal layer 410 may have an opening 411 andmay be formed on the first surface S1 of the first insulating layer 420.For example, the opening 411 may extend in the second direction D2, andmay include a trough structure. However, the disclosure is not limitedthereto. The second metal layer 430 may be formed on the second surfaceS2 of the first insulating layer 420. In the embodiment, a projection ofthe opening 411 on the second surface S2 in the third direction D3 maybe overlapped with a projection of the second metal layer 430 on thesecond surface S2 in the direction opposite to the third direction D3.It should be noted that the first metal layer 410 may include a circuitassembly or a metal assembly structure including at least one of anelectrode sheet, a bonding pad, a routing, and a heat sink, and thesecond metal layer 430 may also include a circuit assembly or a metalassembly structure including at least one of an electrode sheet, abonding pad, a routing, and a heat sink. However, the disclosure is notlimited thereto. In the embodiment, the routing layer 440 may also beformed on the second surface S2 of the first insulating layer 420. Inaddition, the routing layer 440 may include a plurality of circuitwires. In some embodiments, the second metal layer 430 and the routinglayer 440 may be formed at the same layer on the second surface S2 ofthe first insulating layer 420. In other embodiments, the second metallayer 430 and/or the routing layer 440 may respectively keep differentdistances from the second surface S2 of the first insulating layer 420.In addition, at least one insulating layer may be disposed between thesecond metal layer 430 and the routing layer 440. However, thedisclosure is not limited thereto.

In the embodiment, the second insulating layer 460 covering the secondmetal layer 430 and the routing layer 440 is further formed on thesecond surface S2 of the first insulating layer 420. The transistorcircuit 450 and the electronic assembly 470 are disposed on the secondinsulating layer 460. The transistor circuit 450 may be electricallyconnected with the routing layer 440 via a conductor 451. The electronicassembly 470 may be electrically connected with the first metal layer410 and the second metal layer 430 via a conductor 471 and a conductor472. The conductors 451 and 471 may be arranged as vias to penetratethrough at least a portion of the first insulating layer 420 and/or atleast a portion of the second insulating layer 460. In addition, theconductor 472 may be arranged as a via to penetrate through the secondinsulating layer 460. The materials of the conductors 451, 471 and 472may include a metal conductive material, such as a tin lead alloy. Inthe embodiment, the electronic assembly 470 may include a PN unctionassembly, a solar cell, an integrated circuit (IC), a light emittingdiode (LED) assembly, a sensor, etc., other suitable electronicassemblies, or a combination thereof. However, the disclosure is notlimited thereto. In some embodiments, the PN junction assembly includesa variable capacitor. In addition, in some embodiments, a passiveassembly, a thin film battery, a sensor, or an LED, etc., may also bedisposed on or electrically connected with the first metal layer 410 onthe first surface S1 of the first insulating layer 420. However, thedisclosure is not limited thereto, either. In the embodiment, thecontrol circuit 480 may be disposed on a carrier plate 481 andelectrically connected with the routing layer 440 through a conductivematerial 482, so as to be electrically connected with the transistorcircuit 450 via the routing layer 440. In the embodiment, the controlcircuit 480 is configured to provide relevant electronic signals, suchas control signals, driving signals, etc., to the electronic assembly470 via the transistor circuit 450 to control or drive the electronicassembly 470. The transistor circuit 450 may be electrically connectedwith the first metal layer 410 and the electronic assembly 470. However,the disclosure is not limited thereto. Therefore, the electronicapparatus 400 of the embodiment is provided with an architecture havingthe double-sided RDL routing and provided with the transistor circuit450. In addition, the electronic assembly 470 disposed on the substratemay be controlled or driven by the transistor circuit 450.

FIGS. 5A and 5B are flowcharts illustrating a manufacturing method ofthe electronic apparatus according to the second embodiment of thedisclosure. FIGS. 6A to 6D are schematic cross-sectional viewsillustrating structures in respective stages in the manufacturing methodshown in FIGS. 5A and 5B. Each of the steps in the embodiment may becarried out by performing a corresponding semiconductor manufacturingprocess or a combination of a plurality of corresponding semiconductormanufacturing processes. In addition, the structures of FIGS. 3A to 3Dformed in the respective intermediate steps may be respectivelyimplemented independently as specific electronic apparatuses, and thesestructures are not limited to being only applicable to the electronicapparatus manufactured in the final step. Referring to FIGS. 5A and 6A,the manufacturing method of FIG. 5A allows to manufacture an electronicapparatus with a structure having double-sided RDL routing. In StepS501, a carrier substrate 601 is provided. The carrier substrate 601 maybe a rigid substrate or a flexible substrate. The disclosure does notintend to impose a limitation on this regard. In Step S502, a firstmetal layer 610 having an opening 611 is formed on the carrier substrate601. The opening 611 may be formed by performing a semiconductor etchingprocess, for example. Also, in the first metal layer 610, a metalcomponent or a circuit component such as an electrode 612, an electrode613, an electrode 614, an electrode 615, and an electrode 616, etc.,shown in FIG. 6A may be formed by performing a semiconductor etchingprocess. However, the disclosure is not limited thereto. In someembodiments, one or more of the electrodes 613 to 616 may be omitted. InStep S503, a first insulating layer 620 may be formed on the first metallayer 610. As an example, the first surface S1 of the first insulatinglayer 620 directly or indirectly contacts the first metal layer 610.However, the disclosure is not limited thereto. In Step S504, a secondmetal layer 630 may be formed on the first insulating layer 620, and thesecond surface S2 of the first insulating layer 620 directly orindirectly contacts the second metal layer 630. The first surface S1 isopposite to the second surface S2. It should be noted that a projectionof the opening 611 on the second surface S2 may be overlapped with aprojection of the second metal layer 630 on the second surface S2. InStep S505, a routing layer 640 is formed on the first insulating layer620. In addition, the routing layer 640 is electrically connected withthe transistor circuit 650. In Step S506, a second insulating layer 660covering the second metal layer 330 and the routing layer 630 is formedon the first insulating layer 620.

Referring to FIGS. 5A and 6B, in Step S507, the transistor circuit 650is disposed on the second insulating layer 660 and electricallyconnected with the routing layer 640. The transistor circuit 650 may beelectrically connected with the routing layer 640 via a conductor 651 bySMT. However, the disclosure is not limited thereto. The conductor 651may be arranged as a via to penetrate through at least a portion of thesecond insulating layer 660. In Step S508, an electronic assembly 670 isdisposed on the second insulating layer 660, and the electronic assembly670 is electrically connected with the transistor circuit 650, the firstmetal layer 610, and the second metal layer 630. The electronic assembly670 may be electrically connected with the first metal layer 610 and thesecond metal layer 630 through a conductor 671 and a conductor 672 bySMT, and electrically connected with the transistor circuit 650 viaadditional routing. However, the disclosure is not limited thereto. Theconductor 671 may be arranged as a via to penetrate through at least aportion of the first insulating layer 620 and/or at least a portion ofthe second insulating layer 660. The conductor 672 may also be arrangedas a via to penetrate through at least a portion of the secondinsulating layer 660. In Step S509, a control circuit 680 may beelectrically connected with the routing layer 640. The control circuit680, a conductive material 682, and the routing layer 640 are similar tothe control circuit 180, the conductive material 182, and the routinglayer 140. Therefore, details in this regard will not be repeated in thefollowing. For example, the electronic assembly 670 is similar to theelectronic assembly 170, so details in this regard will not be repeatedin the following.

Referring to FIG. 6C, in some embodiments, Step S508 may further includefurther providing another electronic assembly 670′ on the secondinsulating layer 660. In addition, the electronic assembly 670′ iselectrically connected with the second metal layer 630. Referring toFIGS. 5B and 6C, in Step S510, a connecting layer 602 covering theelectronic assemblies 670 and 670′, the transistor circuit 650, and thecontrol circuit 680 is formed on the second insulating layer 660, andanother carrier substrate 603 is disposed on the connecting layer 602.Step S510 is similar to Step S210, so details in this regard will not berepeated in the following.

FIG. 7 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a third embodiment of thedisclosure. Referring to FIG. 7 , an electronic apparatus 700 mayinclude an electronic structure having single-sided redistribution layer(RDL) routing, so that a relevant electronic/circuit element may bedisposed on one side of a substrate. Specifically, the electronicapparatus 700 may include a first metal layer 710, a first insulatinglayer 720, a second metal layer 730, a routing layer 740, a transistorcircuit 750, a second insulating layer 760, a PN junction assembly 770,and a control circuit 780. The transistor circuit 750 may include one ormore transistors, and the transistors may be bottom-gate transistors,top-gate transistors, or double/dual-gate transistors. In theembodiment, the first insulating layer 720 includes the first surface S1and the second surface S2. The first surface S1 is opposite to thesecond surface S2. In the embodiment, the first insulating layer 720 mayinclude a flexible circuit board material. However, the disclosure isnot limited thereto. In some embodiments, the first insulating layer 720may also include a rigid material, a flexible material, or a flexiblecircuit board, etc.

In the embodiment, the first metal layer 710 and the second metal layer730 may be formed on the second surface S2 of the first insulating layer720. It should be noted that the first metal layer 710 may include acircuit assembly or a metal assembly structure including at least one ofan electrode, a bonding pad, a routing, and a heat sink, and the secondmetal layer 730 may also include a circuit assembly or a metal assemblystructure including at least one of an electrode, a bonding pad, arouting, and a heat sink. In the embodiment, the routing layer 740 andthe transistor circuit 750 may also be formed on the second surface S2of the first insulating layer 720. The transistor circuit 750 may beelectrically connected with the routing layer 740, and the routing layer740 includes a plurality of circuit wires. In some embodiments, thefirst metal layer 710, the second metal layer 730, the routing layer740, and the transistor circuit 750 may be formed at the same layer onthe second surface S2 of the first insulating layer 720. In otherembodiments, the first metal layer 710, the second metal layer 730, andthe routing layer 740 may respectively keep different distances from thesecond surface S2 of the first insulating layer 720. However, thedisclosure is not limited thereto.

In the embodiment, the second insulating layer 760 covering the firstmetal layer 710, the second metal layer 730, the routing layer 740, andthe transistor circuit 750 is further formed on the second surface S2 ofthe first insulating layer 720. The PN junction assembly 770 is disposedon the first surface S1 of the first insulating layer 720, so as to beelectrically connected with the first metal layer 710 and the secondmetal layer 730 via conductors 771 and 772. The conductors 771 and 772may be arranged as vias to penetrate through the first insulating layer720. In addition, the conductors 711 and 772 may include a metalconductive material, such as a tin lead alloy. In the embodiment, the PNjunction assembly 770 may include a variable capacitor. In theembodiment, the control circuit 780 is disposed on a carrier plate 781and electrically connected with the routing layer 740 through aconductive material 782, so as to be electrically connected with thetransistor circuit 750 via the routing layer 740. In the embodiment, thecontrol circuit 780 is configured to provide relevant electronicsignals, such as control signals, driving signals, etc., to the PNjunction assembly 770 via the transistor circuit 750 to control or drivethe PN junction assembly 770. Therefore, the electronic apparatus 700 ofthe embodiment is provided with an architecture having the single-sidedRDL routing and provided with the transistor circuit 750. In addition,the PN junction assembly 770 disposed on the substrate may be controlledor driven by the transistor circuit 750.

FIG. 8 is a flowchart illustrating a manufacturing method of theelectronic apparatus according to the third embodiment of thedisclosure. FIGS. 9A to 9D are schematic cross-sectional viewsillustrating structures in respective stages in the manufacturing methodshown in FIG. 8 . Each of the steps in the embodiment may be carried outby performing a corresponding semiconductor manufacturing process or acombination of a plurality of corresponding semiconductor manufacturingprocesses. In addition, the structures of FIGS. 9A to 9D formed in therespective intermediate steps may be respectively implementedindependently as specific electronic apparatuses, and these structuresare not limited to being only applicable to the electronic apparatusmanufactured in the final step. Referring to FIGS. 8 and 9A, themanufacturing method of FIG. 8 allows to manufacture an electronicapparatus with an electronic structure having single-sided RDL routing.In Step S801, a carrier substrate 901 is provided. The material of thecarrier substrate 901 may, for example, include the materials for arigid substrate or a flexible substrate. The disclosure does not intendto impose a limitation on this regard. In Step S802, a first insulatinglayer 920 is formed on the carrier substrate 901. In Step S803, a firstmetal layer 910 and a second metal layer 930 may be formed on the firstinsulating layer 920. The first metal layer 910 and the second metallayer 930 may be, for example, a metal component or a circuit component,such as a bonding pad, a heat sink, a routing and an electrode sheet,which is formed by performing a semiconductor etching process. However,the disclosure is not limited thereto. In Step S804, a transistorcircuit 950 is formed on the first insulating layer 920, and thetransistor circuit 950 may be electrically connected with the secondmetal layer 930. In Step S805, a routing layer 940 is formed on thefirst insulating layer 920. In addition, the routing layer 940 iselectrically connected with the transistor circuit 950. In Step S806, asecond insulating layer 960 covering the first metal layer 910, thesecond metal layer 930, the routing layer 940, and the transistorcircuit 950 is formed on the first insulating layer 920.

Referring to FIGS. 8 and 9B, in Step S807, a control circuit 980 iselectrically connected with the routing layer 940. The control circuit980 may be manufactured on a carrier plate 981 by COF or COG. Thematerial of the carrier plate 981 may include a thin film, glass, orother suitable materials. The routing layer 940 may include a fan-outrouting, and the routing layer 940 may be arranged in correspondencewith the via or opening of the second insulating layer 960 above therouting layer 940. In the embodiment, a control chip formed by thecontrol circuit 980 and the carrier plate 981 may be arranged above therouting layer 940 in a chip face down manner, and the control chip maybe electrically connected with the routing layer 940 by SMT or bybonding with an anisotropic conductive film (ACF). However, thedisclosure is not limited thereto. For example, the control circuit 980may be electrically connected with the routing layer 940 through aconductive material 982 and electrically connected with the transistorcircuit 950 through the routing layer 940.

Referring to FIGS. 8 and 9C, in Step S808, a connecting layer 902covering the control circuit 980 is formed on the second insulatinglayer 960, and another carrier substrate 903 is formed on the connectinglayer 902. The carrier substrate 903 may be a rigid substrate, aflexible substrate, or a combination thereof. In addition, theconnecting layer 902 may include a temporary connecting material, forexample. In Step S809, the carrier substrate 901 is removed. The carriersubstrate 901 may be removed by, for example, laser, heating, or lightirradiation, etc. The disclosure does not intend to impose a limitationon this regard. Since the first insulating layer 920 may include theflexible material, for example, in order to reduce the damages to thestructures and the assembly on the sides of the first insulating layer920 when the carrier substrate 901 is removed, the another carriersubstrate 903 and the connecting layer 902 may be firstly formed on thesecond insulating layer 960 and then the carrier substrate 901 beremoved. However, the disclosure is not limited thereto. In Step S810,an electronic assembly 970 is disposed below the first insulating layer920 (on the first surface S1), and the electronic assembly 970 iselectrically connected with the first metal layer 910 and the secondmetal layer 930. The electronic assembly 970 may be electricallyconnected with the first metal layer 910 and the second metal layer 930via a conductor 971 and a conductor 972 and be electrically connectedwith the transistor circuit 950. The conductors 971 and 972 may bearranged as vias to penetrate through at least a portion of the firstinsulating layer 920. In Step S811, the connecting layer 902 and theanother carrier substrate 903 are removed. The connecting layer 902 maybe removed by, for example, laser, heating, or light irradiation, etc.,so that the carrier substrate 903 is separated from the secondinsulating layer 960.

FIG. 10 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a fourth embodiment of thedisclosure. Referring to FIG. 10 , an electronic apparatus 1000 mayinclude an electronic structure having single-sided redistribution layer(RDL) routing, so that a relevant electronic/circuit element may bedisposed on one side of a first insulating layer 1020. Specifically, theelectronic apparatus 1000 includes a first metal layer 1010, a firstinsulating layer 1020, a second metal layer 1030, a routing layer 1040,a transistor circuit 1050, a second insulating layer 1060, an electronicassembly 1070 (e.g., a PN junction assembly), and a control circuit1080. The transistor circuit 1050 may include one or more transistors,and the transistors may be bottom-gate transistors, top-gatetransistors, or double/dual-gate transistors. In the embodiment, thefirst insulating layer 1020 includes the first surface S1 and the secondsurface S2. The first surface S1 is opposite to the second surface S2.In the embodiment, the first insulating layer 1020 may include aflexible material. However, the disclosure is not limited thereto. Insome embodiments, the first insulating layer 1020 may also include arigid material, a flexible material, or a flexible circuit board, etc.It should be noted that the transistor circuit 1050 of the embodimentmay include a base material (not shown) and at least one transistor, andthe at least one transistor is disposed on the base material. The atleast one transistor may be electrically connected with the electronicassembly 1070 and/or the second metal layer 1030.

In the embodiment, the first metal layer 1010 and the second metal layer1030 may be formed on the second surface S2 of the first insulatinglayer 1020. It should be noted that the first metal layer 1010 mayinclude a circuit assembly or a metal assembly structure including atleast one of an electrode, a bonding pad, a routing, and a heat sink,and the second metal layer 1030 may also include a circuit assembly or ametal assembly structure including at least one of an electrode, abonding pad, a routing, and a heat sink. However, the disclosure is notlimited thereto. In the embodiment, the routing layer 1040 may befurther formed on the second surface S2 of the first insulating layer1020. In some embodiments, the first metal layer 1010, the second metallayer 1030 and the routing layer 1040 may be formed at the same layer onthe second surface S2 of the first insulating layer 1020. In otherembodiments, the first metal layer 1010, the second metal layer 1030,and the routing layer 1040 may respectively keep different distancesfrom the second surface S2 of the first insulating layer 1020.

In the embodiment, the second insulating layer 1060 covering the firstmetal layer 1010, the second metal layer 1030 and the routing layer 1040is further formed on the second surface S2 of the first insulating layer1020. The transistor circuit 1050 is disposed on the second insulatinglayer 1060, and the transistor circuit 1050 may be electricallyconnected with the routing layer 1040 via a conductor 1051. Theconductor 1051 may be arranged as a via to penetrate through the secondinsulating layer 1060. The electronic assembly 1070 (e.g., a PN junctionassembly) is disposed on the first surface S1 of the first insulatinglayer 1020. The conductors 1071 and 1072 may be arranged as vias topenetrate through the first insulating layer 1020. In addition, theconductors 1071 and 1072 may include a metal conductive material, suchas a tin lead alloy. In the embodiment, the control circuit 1080 isdisposed on a carrier plate 1081 and may be electrically connected withthe routing layer 1040 through a conductive material 1082, so as to beelectrically connected with the transistor circuit 1050 via the routinglayer 1040.

FIG. 11 is a flowchart illustrating a manufacturing method of theelectronic apparatus according to the fourth embodiment of thedisclosure. FIGS. 12A to 12D are schematic cross-sectional viewsillustrating structures in respective stages in the manufacturing methodshown in FIG. 11 . Each of the steps in the embodiment may be carriedout by performing a corresponding semiconductor manufacturing process ora combination of a plurality of corresponding semiconductormanufacturing processes. In addition, the structures of FIGS. 12A to 12Dformed in the respective intermediate steps may be respectivelyimplemented independently as specific electronic apparatuses, and thesestructures are not limited to being only applicable to the electronicapparatus manufactured in the final step. Referring to FIGS. 11 and 12A,the manufacturing method of FIG. 11 allows to manufacture an electronicapparatus with an electronic structure having single-sided RDL routing.In Step S1101, a carrier substrate 1201 is provided. The carriersubstrate 1201 may be a rigid substrate or a flexible substrate. Thedisclosure does not intend to impose a limitation on this regard. InStep S1102, a first insulating layer 1220 is formed on the carriersubstrate 1201. In Step S1103, a first metal layer 1210 and a secondmetal layer 1230 may be formed on the first insulating layer 1220. InStep S1104, a routing layer 1240 is formed on the first insulating layer1220. In addition, the routing layer 1240 is electrically connected withthe transistor circuit 1250. In Step S1105, a second insulating layer1260 covering the first metal layer 1210, the second metal layer 1230,and the routing layer 1240 is formed on the first insulating layer 1220.

Referring to FIGS. 11 and 12B, in Step S1106, the transistor circuit1250 is disposed on the second insulating layer 1260 and electricallyconnected with the routing layer 1240. The transistor circuit 1250 maybe electrically connected with the routing layer 1240 via a conductor1251. In Step S1107, a control circuit 1280 is electrically connectedwith the routing layer 1240. Referring to FIGS. 11 and 12C, in StepS1108, a connecting layer 1202 covering the control circuit 1280 and thetransistor circuit 1250 is formed on the second insulating layer 1260,and another carrier substrate 1203 is formed on the connecting layer1202. In Step S1109, the carrier substrate 1201 is removed. In StepS1110, an electronic assembly 1270 (e.g., a PC junction assembly withvariable capacitor) is disposed below the first insulating layer 1220(on the first surface S1), and the electronic assembly 1270 iselectrically connected with the first metal layer 1210 and the secondmetal layer 1230. In Step S1111, the connecting layer 1202 and theanother carrier substrate 1203 are removed. The connecting layer 1202may be removed by, for example, laser, heating, or light irradiation,etc., so that the carrier substrate 1203 is separated from the secondinsulating layer 1260.

FIG. 13 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a fifth embodiment of thedisclosure. Referring to FIG. 13 , an electronic apparatus 1300 mayinclude an electronic structure having single-sided redistribution layer(RDL) routing, so that a relevant electronic/circuit element may bedisposed on one side of a first insulating layer 1320. Specifically, theelectronic apparatus 1300 includes a first metal layer 1310, a firstinsulating layer 1320, a second metal layer 1330, a routing layer 1340,a transistor circuit 1350, a second insulating layer 1360, an electronicassembly 1370 (e.g., a PN junction assembly), and a control circuit1380.

Specifically, the second metal layer 1330 and the routing layer 1340 areformed on the second surface S2 of the first insulating layer 1320. Insome embodiments, the second metal layer 1330 and the routing layer 1340may be formed at the same layer or different layers on the secondsurface S2 of the first insulating layer 1320. In the embodiment, thesecond insulating layer 1360 covering the second metal layer 1330 andthe routing layer 1340 is formed on the second surface S2 of the firstinsulating layer 1320. In addition, the first metal layer 1310 having anopening 1311 is formed on the second insulating layer 1360. It should benoted that a projection of the opening 1311 on the second surface S2 maybe overlapped with a projection of the second metal layer 1330 on thesecond surface S2. In the embodiment, the transistor circuit 1350 may beelectrically connected with a conductor 1351 and the second metal layer1330. In the embodiment, the electronic assembly 1370 is disposed on thefirst surface S1 of the first insulating layer 1320, and may also beelectrically connected with the first metal layer 1310 and the secondmetal layer 1330 via conductors 1371 and 1372.

In the embodiment, the control circuit 1380 is configured to providerelevant electronic signals, such as control signals, driving signals,etc., to the electronic assembly 1370 via the transistor circuit 1350 tocontrol or drive the electronic assembly 1370. For example, theelectronic assembly 1370 may include a PN junction assembly. Inaddition, the control circuit 1380 may modulate the capacitance valuethrough the transistor circuit 1350, so that the capacitance valuebetween the first metal layer 1310 and the second metal layer 1330 maybe correspondingly adjusted. An electromagnetic wave radiation assemblyor an electromagnetic wave radiation modulator may be formed between theopening 1311 of the first metal layer 1310 and the second metal layer1330.

FIG. 14 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a sixth embodiment of thedisclosure. Referring to FIG. 14 , an electronic apparatus 1400 may bean electronic structure having single-sided redistribution layer (RDL)routing, so that a relevant electronic/circuit element may be disposedon one side of a first insulating layer 1420. Specifically, theelectronic apparatus 1400 includes a first metal layer 1410, a firstinsulating layer 1420, a second metal layer 1430, a routing layer 1440,a transistor circuit 1450, a second insulating layer 1460, an electronicassembly 1470, and a control circuit 1480.

In the embodiment, the transistor circuit 1450 may be electricallyconnected with a conductor 1452 and the second metal layer 1430. Theconductor 1452 may be arranged as a via to penetrate through at least aportion of the first insulating layer 1420. In the embodiment, thecontrol circuit 1480 is configured to provide relevant electronicsignals, such as control signals, driving signals, etc., to theelectronic assembly 1470 via the transistor circuit 1450 to control ordrive the electronic assembly 1470. In an embodiment, the controlcircuit 1480 is electrically connected with the electronic assembly 1470via the second metal layer 1430, the transistor circuit 1450, and/or therouting layer 1440.

FIG. 15 is a schematic cross-sectional view illustrating a structure ofan electronic apparatus according to a seventh embodiment of thedisclosure. Referring to FIG. 15 , an electronic apparatus 1500 mayinclude an electronic structure having single-sided redistribution layer(RDL) routing. Specifically, the electronic apparatus 1500 may include afirst metal layer 1510, a first insulating layer 1520, a second metallayer 1530, a routing layer 1540, a transistor circuit 1550, a secondinsulating layer 1560, an electronic assembly 1570, and a controlcircuit 1580.

In the embodiment, the transistor circuit 1550 may be formed on thefirst surface S1 of the first insulating layer 1520, and may beelectrically connected with the PN junction assembly 1570 via theconductor 1553. The conductor 1553 is formed on the first surface S1 ofthe first insulating layer 1520 and connects the transistor circuit 1550and the PN junction assembly 1570. In addition, the conductor 1553 mayinclude a metal conductive material. In an embodiment, the controlcircuit 1580 may be electrically connected with the electronic assembly1570 via the second metal layer 1530, the transistor circuit 1550,and/or the routing layer 1540. However, the disclosure is not limitedthereto.

In view of the foregoing, the electronic apparatus and the manufacturingmethod thereof according to the embodiments of the disclosure are ableto provide an electronic structure having single/double-sided RDLrouting and provided with the transistor circuit, and the electronicassembly disposed on the substrate may be controlled or driven by thetransistor circuit. In addition, the single/double-sided RDL routingarchitecture according to the embodiments of the disclosure can berealized with an architecture having a fewer number of layers.Accordingly, the size of the electronic apparatus and the manufacturingcost can be effectively reduced.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of thedisclosure without departing from the scope or spirit of the disclosure.In view of the foregoing, it is intended that the disclosure covermodifications and variations of this disclosure provided they fallwithin the scope of the following claims and their equivalents.

What is claimed is:
 1. An electronic apparatus, comprising: a substrate;a first metal layer, disposed on the substrate; an insulating layer,disposed on the substrate; a first conductor, formed in a first via ofthe insulating layer; an electronic assembly, disposed on the substrateand electrically connected to the first metal layer through the firstconductor; and a transistor circuit die, electrically connected to thefirst metal layer.
 2. The electronic apparatus of claim 1, wherein thetransistor circuit die comprises: a glass substrate; and at least onetransistor, formed on the glass substrate.
 3. The electronic apparatusof claim 1, wherein the electronic assembly is a PN junction assembly.4. The electronic apparatus of claim 3, wherein the electronic assemblycomprises a variable capacitor.
 5. The electronic apparatus of claim 1,wherein the first metal layer comprises at least one bonding pad.
 6. Theelectronic apparatus of claim 1, further comprising: a second metallayer, disposed on the substrate; and a second conductor, formed in asecond via of the insulating layer, and electrically connected to theelectronic assembly and the second metal layer.
 7. The electronicapparatus of claim 6, further comprising: another insulating layer,disposed between the first metal layer and the second metal layer. 8.The electronic apparatus of claim 1, further comprising: a controlcircuit, wherein the transistor circuit die receives a control signalfrom the control circuit and drives the electronic assembly.
 9. Theelectronic apparatus of claim 1, wherein the electronic assemblycomprises a light emitting diode.